Conference Talks:

 

1.      T. Spila, P. Desjardins, H. Kim, N. Taylor, David G. Cahill, and J.E. Greene, “Surface morphological evolution in Si0.7Ge0.3/Si(001) structures grown by gas-source molecular-beam epitaxy.” 44th National Symposium of the American Vacuum Society (1997).

2.      T. Spila, P. Desjardins, H. Kim, N. Taylor, D.G. Cahill, J.E. Greene, “Hydrogen-mediated surface morphological evolution in Si0.7Ge0.3/Si(001) layers grown by hydride gas-source molecular beam epitaxy.” 46th National Symposium of the American Vacuum Society (1999).

3.      T. Spila, P. Desjardins, H. Kim, N. Taylor, David G. Cahill, S. Guillon, R.A. Masut, and J.E. Greene, Hydrogen-mediated surface morphological evolution in Si0.7Ge0.3/Si(001) layers grown by hydride gas-source molecular beam epitaxy. ” NATO-Advanced Study Institute, Kaunas, Lithuania (2001). 

4.      T. Spila, “Hydrogen-mediated surface morphological evolution in Si0.7Ge0.3/Si(001) layers grown by hydride gas-source molecular beam epitaxy.” Center for Microanalysis of Materials, Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, IL. (2002).

5.      T. Spila, P. Desjardins, J. D’Arcy-Gall, R.D. Twesten, J.E. Greene, Effect of crosshatch formation on the kinetics of Si1‑xGex  growth on Si(001) from hydride precursors. 50 National Symposium of the American Vacuum Society (2003).

6.      T. Spila, D.P. Abraham, Measurement and effect of transition-metal accumulation on graphite anodes by SIMS in lithium-ion battery cells.20th International Conference on Secondary Ion Mass Spectroscopy, Seattle, WA. (2015).