MSE 460: Electronic Materials and Processing I mselogo.gif

Problem set #2; assigned February 2
  1. With your teammates, decide on the topic for the Wikipedia article send a one paragraph description of the scope of your article to d-cahill@uiuc.edu with cc: to whsieh2@uiuc.edu.
  2. Homework problem 1 of AR Chapter 11.
  3. Homework problem 2 of AR Chapter 12. (The answer is qualitative; no equations or numbers.)
  4. Assume that the tube of a horizontal CVD reactor is 200 mm in diameter and the pressure of the H2 carrier gas is 100 Pa. (a) What flow rate (l/s) of H2 is needed to create a Reynolds number of 100? You can use this Java calculator for gas viscosity if you like. (b) At what distance from the entrance to the tube would you expect that the distribution of gas velocities will be parabolic? (c) Assume that the susceptor blocks off » 1/3 of the tube area; the susceptor is not tilted. The top of the susceptor is 200 mm in diameter; the GaAs wafer is 100 mm in diameter and centered in the middle of the susceptor; the growth temperature is 1000 K. If the deposition rate is limited by mass transport through the boundary layer, what will be the relative variation in growth rate from the leading edge to the trailing edge of the substrate? Your answer will be approximate.


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On 03 Feb 2009, 12:38.